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| Light Emitting Diode(InGaN) KLB-520 B DIMENSIONS KLB-520 B is a high bright InGaN blue LED, and has the optimized optical characteristics. Unit : [mm] Features * Transparent epoxy lens * High Optical Output Applications * Display * Indicator * Signage * Camera Maximum Ratings Parameter Reverse voltage Forward current Pulse forward current Power dissipation Storage temperature Soldering Temperature *2. Soldering time 5 Sec *2 *1 [ Ta=25C ] Symbol VR IF IFP PD Topr. Tstg. Tsol. Ratings 5 30 0.5 105 -30 ~ +85 -40 ~ +100 260 Unit V mA A mW C C C Operating temperature *1. IFP Measured under duty 1/10 @ 1KHz Keep the distance more than 3mm from soldering foundation. Electro-Optical Characteristics Parameter Forward voltage Reverse current Luminous Intensity Peak emission wavelength Doninant Wave Length Spectral half bandwidth Half angle [ Ta=25C ] Symbol VF IR Iv P d 21/2 Conditions IF = 20 mA VR = 5 V IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA Min 3 450 - Typ 3.2 5 455 15 8 Max 3.5 50 460 - Unit V uA cd nm nm nm deg. 1/2 Light Emitting Diode(InGaN) KLB-520 B Forward current vs. Ambient temperature 50 Forward current IF[mA] Radiant Intensity vs. Forward current 2.0 40 30 20 10 0 Relative intensity 1.0 0.5 0 20 40 60 80 100 0 0 1 3 5 10 15 20 25 30 Ambient temperature Ta [] Forward current IF[mA] Relative radiant intensity vs. Ambient temperature Relative radiant intensity PO Relative intensity vs. Wavelength 6 10 5 Intensity [arb.] 0 20 40 60 80 100 1 4 3 2 1 0.1 -20 Ambient temperature Ta [] 0 350 400 450 500 550 Wave Length[nm] Forward current vs. Forward voltage 40 35 30 25 20 15 10 5 0 0 Radiant Pattern Angle(deg) Forward current IF[mA] +4 +60 0 + 20 0 -20 -4 0 -6 0 50 -80 -100 + 80 +1 00 0 100 50 50 1.0 2.0 2.5 3.0 3.5 4.0 Forward voltage VF[V] 100 Relative intensity(%) 2/2 |
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